The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 1982

Filed:

Jun. 09, 1980
Applicant:
Inventors:

Norio Hasegawa, Hinodemachi, JP;

Naoki Yamamoto, Kawaguchi, JP;

Hiroshi Yanazawa, Hinodemachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 29580 ; 156646 ; 156656 ; 156657 ; 1566591 ; 357 67 ; 427 88 ; 430313 ; 430315 ; 430318 ;
Abstract

In forming an interconnection pattern on a silicon substrate, an Al-Si alloy is used as an interconnection material, a silicon film is deposited on the Al-Si alloy film, and a photoresist layer is applied and thereafter exposed to light to provide a photoresist pattern to serve as a mask for subsequent etching of the Al-Si alloy film. Thus, the generation of standing waves due to reflection at the exposure is prevented, a microscopic interconnection pattern is precisely formed, and neither the junction-through due to a heat treatment nor a degradation in the bonding characteristics occurs.


Find Patent Forward Citations

Hasegawa, Norio. (1982). Photoetching method (U.S. Patent No. 4321104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4321104

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…