The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1980
Filed:
Feb. 09, 1979
Shuichi Sato, Beaverton, OR (US);
Tadanori Yamaguchi, Hillsboro, OR (US);
Jack Sachitano, Portland, OR (US);
Tektronix, Inc., Beaverton, OR (US);
Abstract
An improved, ultra high speed (2GHz) CMOS inverter structure comprising a double-diffused, planar p-channel transistor and a nonplanar n-channel transistor formed within adjacent surface fields on the same substrate. The n-channel device includes a source region formed in an elevated, plateau region on the substrate, and a narrow, implanted channel-forming layer that extends through the plateau beneath the source region and terminates at a slope joining the plateau to surrounding lower elevation portions of the substrate. A drain region is formed adjacent the foot of the slope, spaced from the channel to provide a drift region between them.