logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4176372 B1

PDFFull Text
Date of Patent:
Nov. 27, 1979

Filed:

Dec. 05, 1977

Semiconductor device having oxygen doped polycrystalline passivation

Applicant:
Inventors:

Takeshi Matsushita, Sagamihara, JP;

Hisao Hayashi, Atsugi, JP;

Teruaki Aoki, Tokyo, JP;

Hisayoshi Yamoto, Hatano, JP;

Yoshiyuki Kawana, Atsugi, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Hill, Van Santen, Steadman, Chiara & Simpson

Primary Examiner:

Joseph E Clawson, Jr

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357 23 ; 357 42 ; 357 53 ; 357 54 ; 357 59 ; 357 86 ;
Abstract

A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

Find Patent Forward Citations

Matsushita, Takeshi. (1979). Semiconductor device having oxygen doped polycrystalline passivation (U.S. Patent No. 4176372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4176372

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…