The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1979
Filed:
Dec. 05, 1977
Applicant:
Inventors:
Takeshi Matsushita, Sagamihara, JP;
Hisao Hayashi, Atsugi, JP;
Teruaki Aoki, Tokyo, JP;
Hisayoshi Yamoto, Hatano, JP;
Yoshiyuki Kawana, Atsugi, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357 23 ; 357 42 ; 357 53 ; 357 54 ; 357 59 ; 357 86 ;
Abstract
A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.