The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1979
Filed:
Dec. 02, 1976
Applicant:
Inventors:
Toshio Yonezawa, Yokosuka, JP;
Hidekuni Ishida, Yokohama, JP;
Shunichi Hiraki, Yokohama, JP;
Shoichi Kitane, Himeji, JP;
Assignee:
Tokyo Shibaura Electric Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
156653 ; 148175 ; 156657 ; 427 85 ; 427 94 ; 427399 ;
Abstract
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming an insulation film and selectively forming a second insulation film at predetermined portions by the use of a silicon nitride film as the mask.