The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1977
Filed:
Jan. 16, 1976
Applicant:
Inventors:
Bruce E Deal, Palo Alto, CA (US);
Daniel C Hu, San Jose, CA (US);
Assignee:
Fairchild Camera and Instrument Corporation, Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 357 42 ; 357 90 ;
Abstract
A complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate and a process for fabricating the structure incorporate oxide isolation of the active device regions, counterdoping of the p-well with impurities of opposite type to obtain a composite doping profile, reduction of Q.sub.ss in the isolation oxide, doping of the gate and field oxides with a chlorine species and phosphorus doping of the polycrystalline silicon gates.