The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jul. 24, 2020
Infineon Technologies Ag, Neubiberg, DE;
Fabian Streb, Regensburg, DE;
Anton Mauder, Kolbermoor, DE;
Stephan Pindl, Ergoldsbach, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device is proposed. The power semiconductor device includes a semiconductor substrate. The power semiconductor device further includes an electrically conducting first layer. At least part of the electrically conducting first layer includes pores. The power semiconductor device further includes an electrically conducting second layer. The electrically conducting second layer is arranged between the semiconductor substrate and the electrically conducting first layer. The pores are at least partially filled with a phase change material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile