The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jun. 14, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xiang Ji, Cupertino, CA (US);

Shuchi Sunil Ojha, Sunnyvale, CA (US);

Praket Prakash Jha, San Jose, CA (US);

Jingmei Liang, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); H10P 14/40 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01); H10P 50/26 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6319 (2026.01); H10P 14/416 (2026.01); H10P 14/6532 (2026.01); H10P 14/668 (2026.01); H10P 50/268 (2026.01); H10W 20/098 (2026.01); H10P 14/6308 (2026.01); H10P 14/6309 (2026.01); H10P 14/6316 (2026.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01);
Abstract

Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.


Find Patent Forward Citations

Quick Actions:

Ji, Xiang. (2026). Densified seam-free silicon-containing material gap fill processes (U.S. Patent No. 12796352). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796352

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