The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Sep. 22, 2023
International Business Machines Corporation, Armonk, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Nicolas Jean Loubet, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is provided that includes stacked field effect transistors (FETs) that have different shaped inner spacers. Notably, the stacked FETs include a first FET having a horizontal inner spacer and a second FET stacked over the first FET and having a fork shaped inner spacer. The present application also provides a method of forming such as a semiconductor structure. The method avoids gate dielectric spacer fang formation in the source/drain regions and thus avoids problems with forming the stacked nanosheet structure of the first FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile