The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jul. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Fan Hsuan Chien, Tainan City, TW;

Kai-Shiung Hsu, Hsinchu City, TW;

Shih-Chi Lin, Hsinchu City, TW;

Cheng-Han Tsai, Tainan City, TW;

Pei Yen Cheng, Tainan City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/668 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a fin base on a substrate, epitaxially growing a S/D region on the fin base, forming a contact opening on the S/D region, forming a semiconductor nitride layer on a sidewall of the contact opening, performing a densification process on the semiconductor nitride layer to form a densified semiconductor nitride layer, forming a silicide layer on an exposed surface of the S/D region in the contact opening, forming a contact plug in the contact opening, and forming a via structure in the contact plug.


Find Patent Forward Citations

Quick Actions:

Chien, Fan. (2026). Methods of forming contact structure in semiconductor devices (U.S. Patent No. 12795997). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795997

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