Integrated circuit device and method for fabricating the same

Abstract

An integrated circuit device includes a plurality of static random access memory (SRAM) cells, a first bit line, a capacitor, a write driver transistor, and a negative voltage generator circuit. The first bit line is coupled with a column of the SRAM cells, wherein the first bit line extends substantially along a first direction. The capacitor includes a first electrode and a second electrode spaced apart from the first electrode. The first electrode has at least one first metal line extending substantially along the first direction, and a length of the at least one first metal line is less than a length of the first bit line in a top view. The write driver transistor is coupled between the first bit line and the first electrode of the capacitor. The negative voltage generator circuit is coupled to the second electrode of the capacitor.