The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 08, 2023
Nexperia Technology (Shanghai) Ltd., Shanghai, CN;
Nexperia B.v., Nijmegen, NL;
Huiling Zuo, Shanghai, CN;
Chunlin Zhu, Shanghai, CN;
Mark Gajda, Shanghai, CN;
Ke Jiang, Shanghai, CN;
Xukun Zhang, Shanghai, CN;
Junli Xiang, Shanghai, CN;
Jinshan Shi, Shanghai, CN;
Yuan Fang, Shanghai, CN;
Nexperia Technology (Shanghai) Ltd., Shanghai, CN;
NEXPERIA B.V., Nijmegen, NL;
Abstract
A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed along a first axis. The gate busbar includes first portions each disposed along a second axis, and the second axis intersects with the first axis. The first portions are spaced apart from each other to divide the semiconductor device into emitter segments. Lengths of the emitter segments along the first axis changes with distances of the segments from the gate pad, so that gate signals arriving at the gates of the cells from the gate pad via the gate busbar and the gate lines are substantially consistent.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile