The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jun. 23, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Tighe A. Spurlin, Portland, OR (US);

Edward C. Opocensky, Aloha, OR (US);

Zhange Feng, Naperville, IL (US);

Matthew A. Rigsby, Tualatin, OR (US);

Jonathan David Reid, Sherwood, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); C25D 3/56 (2006.01); C25D 5/02 (2006.01); C25D 5/34 (2006.01); C25D 5/50 (2006.01); C25D 7/12 (2006.01); C25D 17/00 (2006.01); C25D 21/12 (2006.01); H10W 20/44 (2026.01);
U.S. Cl.
CPC ...
H10W 20/057 (2026.01); C25D 3/562 (2013.01); C25D 5/02 (2013.01); C25D 5/34 (2013.01); C25D 5/50 (2013.01); C25D 7/123 (2013.01); C25D 17/001 (2013.01); C25D 21/12 (2013.01); H10W 20/043 (2026.01); H10W 20/059 (2026.01); H10W 20/4446 (2026.01);
Abstract

Tungsten-containing metal films may be deposited in recessed features of semiconductor substrates by electrodeposition. The tungsten-containing metal film is electrodeposited under conditions so that the tungsten-containing metal film is free or substantially free of oxide. Conditions are optimized during electrodeposition for pH, tungsten concentration, and current density, among other parameters. The tungsten-containing metal film may include cobalt tungsten alloy, cobalt nickel tungsten alloy, or nickel tungsten alloy, where a tungsten content in the tungsten-containing metal film is between about 1-20 atomic %.


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Spurlin, Tighe. (2026). Electrodeposition of cobalt tungsten films (U.S. Patent No. 12787730). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787730

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