The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jun. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Huan-Chieh Su, Changhua, TW;

Chun-Yuan Chen, Hsinchu, TW;

Pei-Yu Wang, Hsinchu, TW;

Cheng-Chi Chuang, New Taipei, TW;

Chih-Hao Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 10/00 (2026.01); H10W 10/10 (2026.01); H10W 20/41 (2026.01); H10W 20/44 (2026.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/115 (2025.01); H10D 62/151 (2025.01); H10D 84/0137 (2025.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10W 10/011 (2026.01); H10W 10/10 (2026.01); H10W 20/427 (2026.01); H10W 20/44 (2026.01);
Abstract

A semiconductor device structure, along with methods of forming such, are described. The structure includes a source region, a drain region, and a gate electrode layer disposed between the source region and the drain region. The gate electrode layer includes a first surface facing the source region, and the first surface includes an edge portion having a first height. The gate electrode layer further includes a second surface opposite the first surface and facing the drain region. The second surface includes an edge portion having a second height. The second height is different from the first height.


Find Patent Forward Citations

Quick Actions:

Su, Huan-Chieh. (2026). Semiconductor device structure and methods of forming the same (U.S. Patent No. 12787425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787425

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