The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Apr. 16, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Wen Huang, Tainan City, TW;

Jaming Chang, Miaoli County, TW;

Kai Hung Cheng, Tainan City, TW;

Chia-Hui Lin, Dajia Township, TW;

Jei Ming Chen, Tainan City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 62/116 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01); H10P 14/6339 (2026.01); H10P 14/69215 (2026.01); H10P 14/693 (2026.01); H10P 14/6934 (2026.01); H10P 14/69391 (2026.01); H10P 14/69392 (2026.01); H10P 14/69393 (2026.01); H10P 14/69394 (2026.01); H10P 14/69395 (2026.01); H10P 14/69433 (2026.01); H10W 10/014 (2026.01); H10W 10/17 (2026.01);
Abstract

Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.


Find Patent Forward Citations

Quick Actions:

Huang, Shih-Wen. (2026). Semiconductor fin cutting process and structures formed thereby (U.S. Patent No. 12787419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787419

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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