The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Feb. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Da-Zhi Zhang, New Taipei City, TW;
Chung-Pin Huang, New Taipei City, TW;
PO-Nien Chen, Miaoli County, TW;
Hsiao-Han Liu, Miaoli County, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Chih-Yung Lin, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile