The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Jun. 05, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wei-Hao Wu, Hsinchu City, TW;
Kuan Chen, Tainan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
One aspect of the present disclosure pertains to a method of forming a semiconductor device. The method includes receiving a workpiece having a first metal gate stack over a first channel region, a second metal gate stack over a second channel region, a source/drain (S/D) feature between the first and second channel regions, and an S/D contact over the S/D feature. First and second dielectric caps are formed over the first and second metal gate stacks and a contact etch stop layer (CESL) is formed over the S/D contact and over the first and second dielectric caps. An interlayer dielectric (ILD) layer is formed over the CESL and an S/D via trench is formed through the ILD layer and the CESL. An S/D via is formed in the S/D via trench, making full surface contact with the S/D contact and partial surface contact with the first and second dielectric caps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile