The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

May. 10, 2024
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Woongsun Kim, Cary, NC (US);

Daniel Jenner Lichtenwalner, Raleigh, NC (US);

Sei-Hyung Ryu, Cary, NC (US);

Naeem Islam, Morrisville, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 62/106 (2025.01); H10D 30/0291 (2025.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01);
Abstract

A power semiconductor device includes semiconductor layer structure comprising a semiconductor drift region of a first conductivity type and an edge termination region comprising a plurality of guard rings of a second conductivity type. The guard rings extend into a surface of the semiconductor drift region. The guard rings respectively comprise a first portion adjacent the surface and a second portion spaced from the surface, where the first portion is wider than the second portion. Related devices and fabrication methods are also discussed.


Find Patent Forward Citations

Quick Actions:

Kim, Woongsun. (2026). Edge termination for power semiconductor devices and related fabrication methods (U.S. Patent No. 12787375). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787375

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