The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 13, 2022
1finity Inc., Kawasaki, JP;
Shirou Ozaki, Yamato, JP;
Naoya Okamoto, Isehara, JP;
Yusuke Kumazaki, Atsugi, JP;
Toshihiro Ohki, Hadano, JP;
Naoki Hara, Sagamihara, JP;
1FINITY Inc., Kawasaki, JP;
Abstract
A semiconductor device includes a protection film having an opening and covering a semiconductor layer, which is formed on a side of a surface of a substrate, on an opposite side of the substrate. An insulating film containing silicon is used for the protection film. A gate electrode is formed in the opening and on a side of a side surface of the semiconductor layer which faces a direction. An insulating film containing metal element is formed between the side surface of the semiconductor layer and the gate electrode. The exposure of the side surface of the semiconductor layer to a gas for dry etching for forming of the opening is suppressed by the insulating film. Furthermore, contact and a short circuit between the gate electrode and the side surface of the semiconductor layer are suppressed. As a result, deterioration in the performance of the semiconductor device is suppressed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile