The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 16, 2022
United Microelectronics Corp., Hsin-Chu City, TW;
Chun-Ming Chang, Kaohsiung City, TW;
Che-Hung Huang, Hsinchu City, TW;
Wen-Jung Liao, Hsinchu City, TW;
Chun-Liang Hou, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a p-type semiconductor layer on the buffer layer, a gate electrode on the p-type semiconductor layer, a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer, a hard mask on the barrier layer and around the p-type semiconductor layer, the source electrode, and the drain electrode, and a passivation layer on the hard mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile