Method for defect detection in a semiconductor sample in sample images with distortion

Abstract

A method for defect detection in a sample, such as in a semiconductor sample, includes the following steps: providing a reference image of the sample; providing a sample image generated via a particle beam inspection system, wherein the sample image comprises a rotation with respect to the reference image; dividing the sample image into sample image regions; dividing the reference image into reference image regions, wherein each sample image region is assigned one reference image region to form an image region pair; identifying in each image region pair a structure that is present both in the sample image region and also in the associated reference image region of the image region pair; registering the sample image regions by correcting a lateral offset of the identified structure in each sample image region on the basis of the location of the identified structure in the respectively associated reference image region, as a result of which corrected sample image regions are formed; and comparing each corrected sample image region pixel by pixel with the respectively associated reference image region for defect detection.