Low-k materials derived by hydrosilylation and methods of using them for deposition

Abstract

A reaction mixture for producing a film-forming polycarbosilazane polymer comprises a first compound containing at least two unsaturated groups and a second compound containing at least two —SiH— hydrosilyl functional groups, wherein the reaction mixture is capable of forming the film-forming polycarbosilazane polymer utilizing hydrosilylation of the first compound by the second compound. Also disclosed are methods of forming a silicon and carbon containing film on a substrate comprising the steps of producing a film-forming polycarbosilazane polymer by a polymerization of a reaction mixture of a first compound containing at least two unsaturated groups and a second compound containing at least two hydrosilyl functional groups, forming a solution containing the film-forming polycarbosilazane polymer, and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film on the substrate.