The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Dec. 28, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Yi Zheng, Sunnyvale, CA (US);
Xiaozhou Che, Santa Clara, CA (US);
Qiang MA, Cupertino, CA (US);
Jun Fang, Xi'an, CN;
Abstract
A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiC, or amorphous SiCN (where X is greater than zero to approximately 2), depositing an amorphous carbon (a-C) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees Celsius or higher. The interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile