Methods of plasma processing using a pulsed electron beam

Abstract

A method of plasma processing includes continuously providing a gas into a processing chamber and AC source power to a source power coupling element for a first duration. The AC source power generates a plasma in the processing chamber. The method further includes, while providing the gas and the AC source power, applying a first negative bias voltage to an electron source electrode for a second duration and removing the first negative bias voltage from the electron source electrode for a third duration to discontinue the generation of the electron beam at the end of the second duration. The first negative bias voltage generates an electron beam directed towards a substrate holder. The method also includes applying a second negative bias voltage to the substrate holder while providing the gas and the AC power. The first duration is equal to the sum of the second duration and the third duration.