The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Mar. 15, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Motoi Takahashi, Miyagi, JP;
Ryutaro Suda, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Takatoshi Orui, Hillsboro, OR (US);
Yoshihide Kihara, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/26 (2026.01); C23C 16/34 (2006.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 50/268 (2026.01); C23C 16/345 (2013.01); H10P 50/242 (2026.01); H10P 50/283 (2026.01); H10P 50/73 (2026.01);
Abstract
A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a CHFgas, a CHFgas, a CHFgas, and a CHFgas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.
Takahashi, Motoi. (2026). Substrate processing method and substrate processing apparatus (U.S. Patent No. 12777858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777858
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