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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777698 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Feb. 12, 2024

Via formation adjacent a middle-of-line contact

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Carl Radens, LaGrangeville, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Huimei Zhou, Albany, NY (US);

Tao Li, Slingerlands, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Kimberly Zillig

Ryan, Mason & Lewis, LLP

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10B 10/00 (2023.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10B 10/12 (2023.02); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10W 20/427 (2026.01);
Abstract

A semiconductor device comprises a contact electrically connected to a source/drain region of a transistor and to a gate region of the transistor. A via is disposed along a side of the contact, wherein the via comprises a conductive material. A dielectric liner layer is disposed around at least a portion of the conductive material. The dielectric liner layer electrically isolates the contact from the conductive material, and the via contacts a bit-line.

Find Patent Forward Citations

Xie, Ruilong. (2026). Via formation adjacent a middle-of-line contact (U.S. Patent No. 12777698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777698

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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