The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Jan. 04, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Fu Wei Liu, Tainan, TW;
Pei-Wei Lee, Kaohsiung City, TW;
Yun-Chung Wu, Taipei City, TW;
Bo-Yu Chiu, Taoyuan City, TW;
Szu-Hsien Lee, Tainan City, TW;
Mirng-Ji Lii, Sinpu Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile