The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jul. 11, 2025
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chieh-Lung Lai, Taichung City, TW;

Meng-Liang Lin, Hsinchu, TW;

Hsien-Wei Chen, Hsinchu, TW;

Shin-Puu Jeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H10W 40/25 (2026.01); H10W 42/00 (2026.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 74/10 (2026.01); H10W 74/15 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 40/255 (2026.01); H10W 70/05 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 72/252 (2026.01); H10W 90/401 (2026.01); H10W 42/121 (2026.01); H10W 72/072 (2026.01); H10W 72/07236 (2026.01); H10W 72/241 (2026.01); H10W 74/141 (2026.01); H10W 74/142 (2026.01); H10W 74/15 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract

A semiconductor device includes: a die having die connectors at a front side of the die; a molding material around the die; and a redistribution structure, where the die connectors of the die are attached to a first side of the redistribution structure, where the redistribution structure includes: a dielectric layer; a conductive line extending along a first surface of the dielectric layer facing the die; and a warpage tuning layer contacting and extending along a first surface of the conductive line facing the die, where a first coefficient of thermal expansion (CTE) of the conductive line is smaller than a second CTE of the warpage tuning layer.


Find Patent Forward Citations

Lai, Chieh-Lung. (2026). Redistribution structure with warpage tuning layer (U.S. Patent No. 12772844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772844

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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