The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Oct. 05, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Yung-Shih Cheng, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10W 42/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10W 20/42 (2026.01); H10W 42/00 (2026.01); H10W 90/00 (2026.01);
Abstract

Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a device layer having a frontside and a backside; a first interconnect structure disposed on the frontside of the device layer, and having a first seal ring structure; a second interconnect structure disposed on the backside of the device layer; and a diode and a transistor embedded in the device layer, wherein a gate of the transistor is electrically connected to the first seal ring structure by the diode.


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Cheng, Yung-Shih. (2026). Semiconductor device and method of forming the same (U.S. Patent No. 12772833). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772833

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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