Metal insulator metal capacitor between two stacked transistors separated by an insulator

Abstract

A semiconductor device including a first stacked nanosheet Field Effect Transistor (FET), a second stacked nanosheet, a metal insulator metal (MIM) capacitor between the first stacked nanosheet and the second stacked nanosheet and an insulator separating the MIM capacitor from each of the first stacked nanosheet and the second stacked nanosheet. An embodiment where the first stacked nanosheet and the second stacked nanosheet each include an upper stacked nanosheet and a lower stacked nanosheet, the upper stacked nanosheet and the lower stacked nanosheet each include alternating layers of a sacrificial material and a semiconductor channel material vertically aligned and stacked one on top of another. Forming a first stacked nanosheet, forming a second stacked nanosheet, forming a MIM capacitor between the first stacked nanosheet and the second stacked nanosheet and forming an insulator separating the MIM capacitor from each of the first stacked nanosheet and the second stacked nanosheet.