The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jan. 19, 2024
Wolfspeed, Inc., Durham, NC (US);
Madankumar Sampath, Morrisville, NC (US);
Woongsun Kim, Cary, NC (US);
Naeem Islam, Morrisville, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A semiconductor device comprises a semiconductor layer structure that has a gate trench therein and a source metallization layer on the semiconductor layer structure. The semiconductor layer structure comprises a drift region having a first conductivity type, a trench shield that has a second conductivity type, the trench shield positioned underneath the gate trench, and a trench shield connection pattern that has the second conductivity type, the trench shield connection pattern electrically connecting the trench shield to the source metallization layer, where the trench shield connection pattern extends deeper into the semiconductor layer structure than the trench shield.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile