The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 11, 2024
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/322 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10P 36/00 (2026.01); H10P 50/64 (2026.01);
U.S. Cl.
CPC ...
H10D 64/018 (2025.01); H10D 30/014 (2025.01); H10P 36/00 (2026.01); H10P 50/642 (2026.01);
Abstract
A method of processing a substrate includes forming a recess by etching a sacrificial layer, forming an inner spacer in the recess, and forming a source/drain region. The sacrificial layer is between a lower nanosheet and an upper nanosheet. The source/drain region is formed adjacent the lower nanosheet, the inner spacer, and the upper nanosheet. The method further includes removing the sacrificial layer with an etch process and performing an oxidation on a portion of the source/drain region through the inner spacer.
Otto, IV, Ivo. (2026). Method for semiconductor manufacturing (U.S. Patent No. 12772529). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772529
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile