The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Aug. 26, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Kensaku Narushima, Nirasaki City, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C30B 29/06 (2006.01); C30B 29/52 (2006.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10D 64/0112 (2026.01); C23C 16/42 (2013.01); C23C 16/45553 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); H10W 20/033 (2026.01); H10W 20/057 (2026.01); C30B 29/06 (2013.01); C30B 29/52 (2013.01);
Abstract
A film forming method of forming a titanium silicide film in a contact forming region of a substrate includes: preparing the substrate having the contact forming region; and forming the titanium silicide film in the contact forming region of the substrate by atomic layer deposition (ALD) by sequentially supplying TiIgas as a Ti precursor and a Si-containing gas as a reducing gas to the substrate.
Narushima, Kensaku. (2026). Film forming method, method of manufacturing semiconductor device, and film forming apparatus (U.S. Patent No. 12772527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772527
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile