The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 31, 2023
Synopsys, Inc., Mountain View, CA (US);
John E. Barwin, Essex Junction, VT (US);
Jeroen Clemens Jozef Paasschens, Oss, NL;
Amanda Woon-Fat, North York, CA;
Gohar Movsisyan, Yerevan, AM;
Marco Miguel Vaz Oliveira, Parede, PT;
Synopsys, Inc., Sunnyvale, CA (US);
Abstract
A computer-implemented method for modeling mandrel tolerance in a design of semiconductor device. The method includes receiving a multiple patterning (MPT) process design kit (PDK) for the semiconductor device. The PDK includes design parameters of a plurality of transistors that form at least part of the semiconductor device and a plurality of fins associated with each of the plurality of transistors. The method includes generating a fin index identifying each of the plurality of fins and grouping the fin indexes of the plurality of fins into two or more groups based on a type of fin. The method further includes identifying a mandrel mismatch in response to determining that a first fin index associated with a first transistor belongs to a group that is different from a second fin index associated with a second transistor. The method also includes determining a device parameter based on the mandrel mismatch identified.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile