The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Nov. 14, 2024
Disco Corporation, Tokyo, JP;
Asahi Nomoto, Tokyo, JP;
DISCO CORPORATION, Tokyo, JP;
Abstract
There is provided a manufacturing method of a wafer for manufacturing from a workpiece the wafer having a thickness smaller than the distance between a first surface and a second surface of the workpiece. The workpiece is an ingot of GaN or a single-crystal substrate of GaN. The method includes forming a separation layer in the workpiece by relatively moving, along a predetermined direction, the workpiece and the focal point of a pulsed laser beam transmitting through the workpiece in a state in which the first surface is irradiated with the laser beam and the focal point is positioned at a predetermined depth position in the workpiece, and separating the wafer from the workpiece by using the separation layer as the point of origin. The angle between a crystal orientation represented by <100> and the predetermined direction in a (0001) plane is equal to or smaller than 10°.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile