The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Mar. 14, 2023
Lam Research Corporation, Fremont, CA (US);
Younghee Lee, Pleasanton, CA (US);
Michelle Margarita Flores Espinosa, Union City, CA (US);
Wenbing Yang, Campbell, CA (US);
Samantha Siamhwa Tan, Newark, CA (US);
Arunima Deya Balan, Mountain View, CA (US);
Yiwen Fan, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for selectively etching at least one feature in an etch layer of doped or undoped material of at least one of silicon, silicon germanium, carbon, and germanium with respect to a mask is provided. A simultaneously selectively etching at least one feature in the etch layer with respect to the mask and selectively depositing a deposition layer is provided by providing an etch gas comprising a metalloid or metal containing precursor and a halogen or oxygen containing component, forming the etch gas into a plasma. and exposing the etch layer to the plasma to simultaneously selectively etching at least one feature in the etch layer with respect to the mask and selectively depositing a deposition layer of metalloid or metal containing material over the mask with respect to the etch layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile