The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Apr. 28, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Hung-Cho Wang, Taipei City, TW;
Sheng-Chang Chen, Hsinchu County, TW;
Jun-Yao Chen, Taoyuan City, TW;
Chang-Jen Hsieh, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a memory device includes forming a dielectric layer over a substrate, in which the substrate has a cell region and a logic region adjacent to the cell region. A bottom electrode, a memory layer, and a top electrode are formed in sequence over the cell region of the substrate. A first spacer is formed extending upwards from the bottom electrode. A second spacer is formed extending upwards from the dielectric layer and lining with sidewalls of the bottom electrode and the first spacer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile