The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Aug. 04, 2023
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, CN;
Abstract
A method of fabricating of semiconductor device is disclosed. The method of fabricating semiconductor device includes: forming a trench fill structure in a substrate in a pixel area; covering a buffer dielectric layer over a surface of the substrate in the pixel area, the buffer dielectric layer burying the trench fill structure; etching the buffer dielectric layer to form a first opening, which at least exposes a portion of the substrate surrounding a top surface of the trench fill structure; and forming a metal grid layer on the buffer dielectric layer, wherein the metal grid layer fills the first opening to at least directly contact with and electrically connect to the exposed portion of the substrate. The present invention provides a technical solution that brings the metal grid layer into electrical connection with the exposed portion of the substrate, thus allowing optimization or amelioration of the semiconductor device's electrical performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile