The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Nov. 08, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Yueran Qiao, Singapore, SG;

Yi Liu, Singapore, SG;

Guohai Zhang, Singapore, SG;

Genmao Liu, Singapore, SG;

Lei Zhu, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10D 30/60 (2025.01); H10D 30/63 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H10D 30/601 (2025.01); H10D 30/637 (2025.01); H10D 86/01 (2025.01);
Abstract

The invention provides a semiconductor structure comprising a silicon-on-insulator (SOI) substrate, which comprises a silicon layer and an insulating layer stacked from bottom to top, a phosphosilicate glass (PGS) on the insulating layer, and a fluorosilicate glass (FSG) on the phosphosilicate glass. The probability of ions infiltrating into the transistor can be reduced and the yield of products can be improved.


Find Patent Forward Citations

Qiao, Yueran. (2026). Semiconductor structure with silicon-on-insulator substrate and the manufacturing method thereof (U.S. Patent No. 12765056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765056

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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