The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Nov. 02, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Yenting Lin, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 62/10 (2025.01); H10P 14/20 (2026.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/117 (2025.01); H10P 14/3406 (2026.01); H10P 50/692 (2026.01); H10W 20/056 (2026.01); H10W 20/089 (2026.01);
Abstract

Methods, apparatuses, and systems related to semiconductor structure with curved surfaces are described. An example apparatus includes a semiconductor structure comprising a patterned material comprising active areas, a first conductive material on a surface of each active area, and a first metal material on a surface of each first conductive material. The patterned material further includes a second and third conductive material, a first nitride material, and a second nitride material separating each active area, first conductive material, and first metal material from each second and third conductive material, and first nitride material. The apparatus includes a curved surface formed on a portion of the first metal material and second nitride material. The apparatus further includes a first layer comprising an oxide material and a second metal material on the patterned material, where the oxide material contacts the curved surface.


Find Patent Forward Citations

Lin, Yenting. (2026). Semiconductor structure with curved surfaces (U.S. Patent No. 12765009). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765009

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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