The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Feb. 21, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Yi-Fan Li, Tainan City, TW;
Nan-Yuan Huang, Tainan City, TW;
Kuan-Jhih Hou, Chiayi County, TW;
Yu-Fu Wang, Taoyuan City, TW;
Ya-Yin Hsiao, Taipei City, TW;
PO-Ching Su, Tainan City, TW;
Ti-Bin Chen, Tainan City, TW;
Chih-Chiang Wu, Tainan City, TW;
Yao-Jhan Wang, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
The invention provides a semiconductor structure with a deep trench capacitor structures, which comprises a substrate, the substrate comprises a bottle-shaped trench, wherein the bottle-shaped trench has an upper part and a lower part in a cross section, and the interface between the upper part and the lower part is a bottleneck line, wherein the bottleneck line is the part with the smallest width in the bottle-shaped trench, a first dielectric layer is filled in the bottle-shaped trench, and a void is located in the first dielectric layer, wherein the highest point of the void is lower than the bottleneck line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile