Pecvd trench bottom profile control with pulsed dual rf plasma

Abstract

Embodiments of the present disclosure relate to an apparatus and method utilized in the manufacture of semiconductor devices. In one embodiment, a method of forming a layer, including positioning a substrate in a processing chamber; introducing at least one precursor gas into the processing chamber; generating a dual RF plasma with the at least one precursor gas by pulsing a first RF power source and a second RF power source, the first RF power source and the second RF power source having different frequencies; depositing a layer on the substrate with the dual RF plasma; introducing at least one additional precursor gas into the processing chamber; generating an etching plasma by applying the first RF power source to the at least one additional precursor gas; and etching the layer with the etching plasma.