The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Mar. 17, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua City, TW;
Guanyu Luo, Chiayi County, TW;
Sheng-Chan Li, Tainan City, TW;
Sheng-Chau Chen, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A sealing layer is formed around a contact structure of a resistor in a semiconductor device. The sealing layer fills in and occupies areas around the contact structure in which an overhang of a hard mask layer occurs as a result of lateral etching of the contact structure during formation of the contact structure. The sealing layer may include a material that can be selectively deposited on sidewalls of the contact structure and not on other layers and/or structures in the semiconductor device. The sealing layer may reduce the likelihood of void formation, in a dielectric layer, that might otherwise occur due to the overhang of the hard mask layer. The reduced likelihood of void formation may enable the dielectric layer to fully fill in the areas around the resistor in the semiconductor device, thereby increasing the structural integrity of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile