The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Mar. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Lin, Taipei City, TW;

Hau-Yan Lu, Hsinchu City, TW;

Te-Hsien Hsieh, Kaohsiung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/17 (2026.01); H10W 10/00 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10W 10/0143 (2026.01);
Abstract

Depositing an oxide material on sidewalls of trenches between etching cycles allows narrower trenches to be etched to increased depths without causing over-etching of wider trenches. As a result, efficiency of a device including the trenches (e.g., a silicon photonics (SiPh) device or a pixel device, among other examples) is increased. For example, because light leakage and light scattering is reduced in an SiPh device, power is conserved at a transmission device that can decrease transmit power on account of the increased efficiency.


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Quick Actions:

Lin, Shih-Wei. (2026). Isolation structures and methods of forming the same (U.S. Patent No. 12757694). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757694

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