The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 27, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Dongjoon Kim, Santa Clara, CA (US);
Xiang Ji, Sunnyvale, CA (US);
Shuchi Sunil Ojha, Redwood City, CA (US);
Praket Prakash Jha, San Jose, CA (US);
Jingmei Liang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present disclosure provides methods of gap fill deposition. The methods include forming a silicon-nitride based dielectric film by providing a substrate into a processing chamber. An amorphous silica layer is formed on a surface of the substrate by flowing a dielectric precursor on the substrate. A modified amorphous silica layer is formed by flowing a reactive gas into the processing chamber. A thermal etching process is performed on the modified amorphous silica layer by flowing a fluorine-containing compound at a temperature of about 400° C. to about 600° C. A silicon-nitride based dielectric film is formed by reacting the modified amorphous silica layer with one or more radicals generated by a remote plasma source. An etched silicon-nitride based dielectric film is formed by flowing a fluorine-containing compound to the processing chamber with plasma. The etched silicon-nitride based dielectric film is exposed to a hydrogen recovery process.