The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Nov. 03, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Ding-Kang Shih, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 64/021 (2025.01);
Abstract
A manufacturing method includes the following steps: forming a semiconductor structure, wherein the semiconductor structure comprises a wafer, a plurality of dummy gates and a dielectric layer, and the dummy gates are formed on the wafer, and the dielectric layer is formed on the dummy gates; forming an epitaxy layer between adjacent two of the dummy gates, wherein there is a nodule remained on the dielectric layer in process of forming the epitaxy layer; and removing the nodule by using an ultrashort laser beam.