Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby

Abstract

A method for manufacturing a semiconductor device includes: forming a semiconductor structure on a substrate; forming a blocking layer to cover side surfaces of spacers of the semiconductor structure by subjecting a nitrogen-containing dielectric material of the spacers to an azidation reaction with an azide compound and a click reaction with a plurality of precursor molecules, each of which includes a head group containing an alkyne radical and a tail group connected to the head group; forming a gate dielectric layer surrounding nanosheet segments of the semiconductor structure; removing the blocking layer; and forming a metal filling layer which is in direct contact with the spacers, and which surrounds the nanosheet segments and is separated from the nanosheet segments by the gate dielectric layer.