The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 09, 2021
Tokyo Electron Limited, Tokyo, JP;
H. Jim Fulford, Albany, NY (US);
Mark I. Gardner, Albany, NY (US);
Partha Mukhopadhyay, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device includes a stack of layers, a vertical channel structure and vertical contact structures. The stack of layers defines a sidewall surface and includes terminal layers which include source, gate and drain layers. The vertical channel structure defines an inner axis that is substantially transverse to a main surface of the stack of layers. The vertical contact structures are each configured to electrically connect to a respective terminal layer. At least two vertical contact structures are in different radial positions relative to the inner axis.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile