The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jan. 09, 2025
Yield Microelectronics Corp., Zhubei City, TW;
Yield Microelectronics Corp., Zhubei City, TW;
Abstract
A low-power programmable erasable nonvolatile memory includes common-source lines, word lines, bit lines, memory arrays, a first electronic switch, a second electronic switch, a decoding device, a first storage capacitor, a second storage capacitor, and a voltage boosting circuit. Each memory array is coupled to one common-source line, one word line, and four bit lines. The decoding device is coupled to the common-source lines, the word lines, the bit lines, a high voltage, a middle voltage, a low voltage, and a grounding voltage. One end of the storage capacitor is coupled to a reference voltage and another end of the storage capacitor is coupled to the decoding device through the electronic switch. The voltage boosting circuit, coupled to the first storage capacitor, charges the first storage capacitor to perform a programming activity or an erasing activity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile