The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Sep. 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan Yu Chen, Hsinchu, TW;
Chun-Yen Lin, Hsinchu, TW;
Wei-Cheng Tzeng, Hsinchu, TW;
Wei-Cheng Lin, Hsinchu, TW;
Shih-Wei Peng, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes: an active region extending in a first direction; a first metal-to-S/D (MD) contact structure extending in a perpendicular second direction, and over and coupled to the active region; a first layer of metallization over the first MD contact structure and having M_1st segments extending in the first direction and each having a substantially same width relative to the second direction, the M_1st segments including M_1st routing segments, and an M_1st power grid (PG) segment having a portion over and coupled to the first MD contact structure; a second layer of metallization over the first layer of metallization and having M_2nd segments that extend in the second direction and include an M_2nd PG rail configured for a first reference voltage, a portion thereof being over and coupled to the M_1st PG segment. the M_2nd PG rail extending across multiple cell regions.