The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Oct. 04, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Brent A. Anderson, Jericho, VT (US);
Kisik Choi, Watervliet, NY (US);
Su Chen Fan, Cohoes, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Son Nguyen, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a nanostructure field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extends vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region extends below a bottom surface of the gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.